Invention Grant
- Patent Title: Semiconductor device and method of manufacture thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11551042Application Date: 2006-10-19
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Publication No.: US07714413B2Publication Date: 2010-05-11
- Inventor: Noboru Morimoto , Masahiko Fujisawa , Daisuke Kodama
- Applicant: Noboru Morimoto , Masahiko Fujisawa , Daisuke Kodama
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-309745 20051025
- Main IPC: H01L23/544
- IPC: H01L23/544
Abstract:
A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.
Public/Granted literature
- US20070090447A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2007-04-26
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