Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
-
Application No.: US11667849Application Date: 2005-11-16
-
Publication No.: US07714448B2Publication Date: 2010-05-11
- Inventor: Osamu Miyata , Masaki Kasai , Shingo Higuchi
- Applicant: Osamu Miyata , Masaki Kasai , Shingo Higuchi
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2004-332175 20041116; JP2005-007983 20050114; JP2005-188732 20050628; JP2005-224421 20050802
- International Application: PCT/JP2005/021048 WO 20051116
- International Announcement: WO2006/054606 WO 20060526
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.
Public/Granted literature
- US20080006910A1 Semiconductor Device and Method for Manufacturing Semiconductor Device Public/Granted day:2008-01-10
Information query
IPC分类:
