Invention Grant
- Patent Title: Eased gate voltage restriction via body-bias voltage governor
- Patent Title (中): 通过体偏压调节器对栅极电压进行限制
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Application No.: US11987969Application Date: 2007-12-06
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Publication No.: US07714638B2Publication Date: 2010-05-11
- Inventor: Hyukju Ryu , Heesung Kang , Kyungsoo Kim
- Applicant: Hyukju Ryu , Heesung Kang , Kyungsoo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2004-0004947 20040127
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
An arrangement, to ease restriction upon gate voltage (Vgg) magnitudes for a dynamic threshold MOS (DTMOS) transistor, may include: an MOS transistor including a gate and a body; and a body-bias-voltage (Vbb) governor (Vbb-governor) circuit to provide a governed version of Vgg of the MOS transistor to the body of the MOS transistor as a dynamic body bias-voltage (Vbb).
Public/Granted literature
- US20080088359A1 Eased gate voltage restriction via body-bias voltage governor Public/Granted day:2008-04-17
Information query
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