Invention Grant
- Patent Title: Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
- Patent Title (中): 隧道磁阻效应元件和具有隧道磁阻效应的薄膜磁头读头元件
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Application No.: US11622603Application Date: 2007-01-12
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Publication No.: US07715156B2Publication Date: 2010-05-11
- Inventor: Kei Hirata , Satoshi Miura
- Applicant: Kei Hirata , Satoshi Miura
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Frommer, Lawrence & Haug LLP
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/127
Abstract:
A TMR element includes a lower electrode layer, a TMR multi-layer stacked on the lower electrode layer, and an upper electrode layer stacked on the TMR multi-layer. The TMR multi-layer includes a tunnel barrier layer having a three-layered structure of a first crystalline layer, a crystalline semiconductor layer and a second crystalline insulation layer stacked in this order.
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