Invention Grant
- Patent Title: Non-volatile programmable memory cell and memory array
- Patent Title (中): 非易失性可编程存储单元和存储器阵列
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Application No.: US12164221Application Date: 2008-06-30
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Publication No.: US07715219B2Publication Date: 2010-05-11
- Inventor: Gerardo Monreal
- Applicant: Gerardo Monreal
- Applicant Address: US MA Worcester
- Assignee: Allegro Microsystems, Inc.
- Current Assignee: Allegro Microsystems, Inc.
- Current Assignee Address: US MA Worcester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G11C17/00
- IPC: G11C17/00

Abstract:
A non-volatile one time programmable memory cell couples in series a two terminal fuse and a three terminal antifuse. The non-volatile one time programmable memory cell includes a memory cell write enable node and a memory cell output node. The non-volatile one time programmable memory cell includes fuse having a first node and a second node, and an antifuse having a trigger node, a first node, and a second node. The trigger node is coupled to the memory cell write enable node. The first node of the antifuse and the second node of the fuse are coupled to the memory cell output node. First and second voltages appearing at the memory cell output node are indicative of first and second binary states of the memory cell. A plurality of such memory cells can be included in a non-volatile programmable memory array. A non-volatile programmable memory cell capable of re-programming is also included.
Public/Granted literature
- US20090323450A1 NON-VOLATILE PROGRAMMABLE MEMORY CELL AND MEMORY ARRAY Public/Granted day:2009-12-31
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