Invention Grant
- Patent Title: Cross-point magnetoresistive memory
- Patent Title (中): 交叉点磁阻存储器
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Application No.: US12229586Application Date: 2008-08-25
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Publication No.: US07715228B2Publication Date: 2010-05-11
- Inventor: James G. Deak
- Applicant: James G. Deak
- Applicant Address: US MN Eden Prairie
- Assignee: NVE Corporation
- Current Assignee: NVE Corporation
- Current Assignee Address: US MN Eden Prairie
- Agency: Kinney & Lange, P.A.
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A ferromagnetic thin-film based digital memory system having memory cells interconnected in a grid that are selected through voltage values supplied coincidently on interconnections made thereto for changing states thereof and determining present states thereof through suitable biasing of grid interconnections.
Public/Granted literature
- US20100046282A1 Cross-point magnetoresistive memory Public/Granted day:2010-02-25
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