Invention Grant
US07715232B2 Method of determining a flag state of a non-volatile memory device
有权
确定非易失性存储器件的标志状态的方法
- Patent Title: Method of determining a flag state of a non-volatile memory device
- Patent Title (中): 确定非易失性存储器件的标志状态的方法
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Application No.: US12138287Application Date: 2008-06-12
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Publication No.: US07715232B2Publication Date: 2010-05-11
- Inventor: Byung Ryul Kim , Duck Ju Kim , You Sung Kim , Sam Kyu Won
- Applicant: Byung Ryul Kim , Duck Ju Kim , You Sung Kim , Sam Kyu Won
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0136372 20071224
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
In a method of determining a flag state of a non-volatile memory device, an arithmetic logic unit of a microcontroller is employed without an additional circuit. The method includes providing n flag state information about n flag cells, resetting an entire flag state information value, sequentially reading first to n flag state information, increasing the entire flag state information value depending on a read result of the first to n flag state information, and determining a flag state by comparing the entire flag state information value and a critical value.
Public/Granted literature
- US20090161425A1 METHOD OF DETERMINING A FLAG STATE OF A NON-VOLATILE MEMORY DEVICE Public/Granted day:2009-06-25
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