Invention Grant
- Patent Title: Fault tolerant non volatile memories and methods
- Patent Title (中): 容错非易失性存储器和方法
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Application No.: US11372438Application Date: 2006-03-09
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Publication No.: US07715236B2Publication Date: 2010-05-11
- Inventor: John D. Hyde
- Applicant: John D. Hyde
- Applicant Address: US CA Fremont
- Assignee: Virage Logic Corporation
- Current Assignee: Virage Logic Corporation
- Current Assignee Address: US CA Fremont
- Agency: Nixon Peabody LLP
- Agent David B. Ritchie
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Methods and structure for fault tolerant Non Volatile Memory (NVM) devices are provided. Readings of selected memory cells are compared to two thresholds above and below a neutral value. Consistency of comparison outputs is used to determine a good or bad reading. Parity bit correction can be used to correct bad readings.
Public/Granted literature
- US20060220639A1 Fault tolerant non volatile memories and methods Public/Granted day:2006-10-05
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