Invention Grant
- Patent Title: Circuit and method of generating high voltage for programming operation of flash memory device
- Patent Title (中): 产生高电压的闪存器件的编程操作的电路和方法
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Application No.: US12235328Application Date: 2008-09-22
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Publication No.: US07715240B2Publication Date: 2010-05-11
- Inventor: Hyun-Chul Ha , Jong-Hwa Kim
- Applicant: Hyun-Chul Ha , Jong-Hwa Kim
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Main IPC: G11C11/03
- IPC: G11C11/03

Abstract:
Provided is a high voltage generator for a flash memory device including a voltage pumping unit configured to generate a high voltage in response to a pumping clock signal, a transistor having a gate coupled to the high voltage and a source coupled to a program voltage, a voltage distributor coupled to the drain of the transistor, the voltage distributor configured to generate a distributor voltage, and a pumping clock controller configured to compare the distributor voltage to a reference voltage and to generate the pumping clock signal when the high voltage is less than a voltage substantially equal to the program voltage plus the threshold voltage of the transistor.
Public/Granted literature
- US20090016114A1 CIRCUIT AND METHOD OF GENERATING HIGH VOLTAGE FOR PROGRAMMING OPERATION OF FLASH MEMORY DEVICE Public/Granted day:2009-01-15
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