Invention Grant
US07715249B2 Semiconductor memory having an output driver equipped with a threshold voltage detecting circuit for adapting the drive capability thereof
失效
具有输出驱动器的半导体存储器，该输出驱动器配备有用于调整其驱动能力的阈值电压检测电路
- Patent Title: Semiconductor memory having an output driver equipped with a threshold voltage detecting circuit for adapting the drive capability thereof
- Patent Title (中): 具有输出驱动器的半导体存储器，该输出驱动器配备有用于调整其驱动能力的阈值电压检测电路
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Application No.: US12169517Application Date: 2008-07-08
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Publication No.: US07715249B2Publication Date: 2010-05-11
- Inventor: Byung-Deuk Jeong
- Applicant: Byung-Deuk Jeong
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2007-0127592 20071210
- Main IPC: G11C7/10
- IPC: G11C7/10 ; H03K19/0185
Abstract:
An output driver of a semiconductor memory apparatus comprises a voltage dividing block configured to generate divide voltages by dividing an internal voltage, a threshold voltage detecting block configured to generate a detecting voltage corresponding to a change in a threshold voltage of a transistor, a drive capability control signal generating block 300 configured to generate a compare signal by comparing the levels of the detecting voltage with the divide voltage and generate a control signal in response to an input signal when the compare signal is enabled, and a drive capability controlling block comprising a driver configured to perform a driving operation in response to the input signal, and a control driver configured to perform a driving operation in response to the control signal.
Public/Granted literature
- US20090147593A1 OUTPUT DRIVER OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-06-11
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