Invention Grant
US07715255B2 Programmable chip enable and chip address in semiconductor memory
有权
半导体存储器中的可编程芯片使能和芯片地址
- Patent Title: Programmable chip enable and chip address in semiconductor memory
- Patent Title (中): 半导体存储器中的可编程芯片使能和芯片地址
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Application No.: US11763287Application Date: 2007-06-14
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Publication No.: US07715255B2Publication Date: 2010-05-11
- Inventor: Loc Tu , Jian Chen , Alex Mak , Tien-Chien Kuo , Long Pham
- Applicant: Loc Tu , Jian Chen , Alex Mak , Tien-Chien Kuo , Long Pham
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Memory die are provided with programmable chip enable circuitry to allow particular memory die to be disabled after packaging and/or programmable chip address circuitry to allow particular memory die to be readdressed after being packaged. In a multi-chip memory package, a memory die that fails package-level testing can be disabled and isolated from the memory package by a programmable circuit that overrides the master chip enable signal received from the controller or host device. To provide a continuous address range, one or more of the non-defective memory die can be readdressed using another programmable circuit that replaces the unique chip address provided by the pad bonding. Memory chips can also be also be readdressed after packaging independently of detecting a failed memory die.
Public/Granted literature
- US20080311684A1 Programmable Chip Enable and Chip Address in Semiconductor Memory Public/Granted day:2008-12-18
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