Invention Grant
- Patent Title: RF power amplifier
- Patent Title (中): 射频功率放大器
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Application No.: US11776851Application Date: 2007-07-12
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Publication No.: US07715812B2Publication Date: 2010-05-11
- Inventor: Takayuki Tsutsui , Yasutaka Nihongi
- Applicant: Takayuki Tsutsui , Yasutaka Nihongi
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, P.C.
- Priority: JP2006-193838 20060714
- Main IPC: H04B1/16
- IPC: H04B1/16

Abstract:
Transmission in DCS1800, PCS1900, and WCDMA1900 is performed by a common second RE power amplifier. In DCS1800 and DCS1900, transmission power is set in a high transmission power mode at 33 dBm by a high-gain input amplifier to activate an internal voltage follower of a bias circuit, and in WCDMA1900, in a low transmission power mode at 28 to 29 dBm by a low-gain input amplifier to inactivate the voltage follower. Switching of the high and low transmission power modes and controlling the voltage follower are performed according to a mode signal. In an RF power amplifier module that transmits frequencies of GSM850, GSM900, DCS1800, PCS1900, and WCDMA1900, it is possible to reduce the number of power amplifiers and, for ramp-up and ramp-down of the GSM standard, to perform high-speed control of an input bias voltage and reduce noise of a transmission power of a wideband WCDMA.
Public/Granted literature
- US20080024225A1 RF POWER AMPLIFIER Public/Granted day:2008-01-31
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