Invention Grant
- Patent Title: Method of making a multi-bit-cell flash memory
- Patent Title (中): 制造多位单元闪存的方法
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Application No.: US11198180Application Date: 2005-08-08
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Publication No.: US07716413B2Publication Date: 2010-05-11
- Inventor: Menahem Lasser
- Applicant: Menahem Lasser
- Applicant Address: IL Kfar Saba
- Assignee: Sandisk IL Ltd.
- Current Assignee: Sandisk IL Ltd.
- Current Assignee Address: IL Kfar Saba
- Agency: Toler Law Group
- Main IPC: G06F12/16
- IPC: G06F12/16 ; G06F12/00

Abstract:
A flash memory is managed by reserving one or more cells as flag cells to represent the number N of bits to store in the cells of a memory block, selecting the value of N from at least three candidates, and programming the flag cell(s) to represent the selected value. A flash memory is managed by selecting a value of the number N>2 of bits to store in the cells of a portion (e.g. a block or page) of the memory, reserving one other cell of the memory as a flag cell to represent how many bits actually are stored in each cell of the portion, and, as the cells of the portion are successively programmed with 1≦n≦N bits, programming the flag cell to represent n.
Public/Granted literature
- US20060004952A1 Method of managing a multi-bit-cell flash memory Public/Granted day:2006-01-05
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