Invention Grant
- Patent Title: Method of degasification in semiconductor cleaning
- Patent Title (中): 半导体清洗中的脱气方法
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Application No.: US11026835Application Date: 2004-12-30
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Publication No.: US07718012B2Publication Date: 2010-05-18
- Inventor: Frank Weber
- Applicant: Frank Weber
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: B08B3/00
- IPC: B08B3/00

Abstract:
A method of improving the effectiveness of semiconductor cleaning solvents is provided. Insoluble gas bubbles, typically air, hinder wet chemical cleaning methods. Preferred embodiments include purging a first, insoluble gas from the cleaning system and replacing it with a second, soluble gas. After replacing the first gas with the second gas, the wafer is rinsed in the cleaning solvent. Any gas bubbles trapped within narrow, recessed features during cleaning rapidly dissolve due to the second gas's solubility. Temperature adjustments during the process may further enhance cleaning.
Public/Granted literature
- US20060144419A1 Method of degasification in semiconductor cleaning Public/Granted day:2006-07-06
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