Invention Grant
US07718029B2 Self-passivating plasma resistant material for joining chamber components
有权
用于连接腔室部件的自钝化等离子体材料
- Patent Title: Self-passivating plasma resistant material for joining chamber components
- Patent Title (中): 用于连接腔室部件的自钝化等离子体材料
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Application No.: US11461689Application Date: 2006-08-01
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Publication No.: US07718029B2Publication Date: 2010-05-18
- Inventor: Jennifer Y. Sun , Li Xu , Senh Thach , Kelly A. McDonough , Robert Scott Clark
- Applicant: Jennifer Y. Sun , Li Xu , Senh Thach , Kelly A. McDonough , Robert Scott Clark
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C04B37/00
- IPC: C04B37/00 ; B29C65/00 ; B32B37/00 ; B32B38/04 ; H01L21/00

Abstract:
Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.
Public/Granted literature
- US20080029211A1 SELF-PASSIVATING PLASMA RESISTANT MATERIAL FOR JOINING CHAMBER COMPONENTS Public/Granted day:2008-02-07
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