Invention Grant
US07718029B2 Self-passivating plasma resistant material for joining chamber components 有权
用于连接腔室部件的自钝化等离子体材料

Self-passivating plasma resistant material for joining chamber components
Abstract:
Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.
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