Invention Grant
US07718231B2 Thin buried oxides by low-dose oxygen implantation into modified silicon
失效
通过低剂量氧注入到改性硅中的薄埋氧化物
- Patent Title: Thin buried oxides by low-dose oxygen implantation into modified silicon
- Patent Title (中): 通过低剂量氧注入到改性硅中的薄埋氧化物
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Application No.: US10674647Application Date: 2003-09-30
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Publication No.: US07718231B2Publication Date: 2010-05-18
- Inventor: Kwang Su Choe , Keith E. Fogel , Siegfried L. Maurer , Ryan M. Mitchell , Devendra K. Sadana
- Applicant: Kwang Su Choe , Keith E. Fogel , Siegfried L. Maurer , Ryan M. Mitchell , Devendra K. Sadana
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: C23C14/10
- IPC: C23C14/10 ; C23C14/48 ; C23C14/58 ; H01L21/762
Abstract:
A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.
Public/Granted literature
- US20050067055A1 Thin buried oxides by low-dose oxygen implantation into modified silicon Public/Granted day:2005-03-31
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