Invention Grant
- Patent Title: Epitaxial ferromagnetic Ni3 FeN
- Patent Title (中): 外延铁磁性Ni3FeN
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Application No.: US12072420Application Date: 2008-02-26
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Publication No.: US07718279B2Publication Date: 2010-05-18
- Inventor: Reza Loloee
- Applicant: Reza Loloee
- Applicant Address: US MI East Lansing
- Assignee: Board of Trustees of Michigan State University
- Current Assignee: Board of Trustees of Michigan State University
- Current Assignee Address: US MI East Lansing
- Agent Ian C. McLeod; Steven M. Parks
- Main IPC: H01F1/00
- IPC: H01F1/00 ; B32B15/00

Abstract:
An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5″×0.5″), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.
Public/Granted literature
- US20080206600A1 Epitaxial ferromagnetic Ni3FeN Public/Granted day:2008-08-28
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