Invention Grant
- Patent Title: Photolithography process and photomask structure implemented in a photolithography process
- Patent Title (中): 在光刻工艺中实现的光刻工艺和光掩模结构
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Application No.: US12244857Application Date: 2008-10-03
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Publication No.: US07718348B2Publication Date: 2010-05-18
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Agent David I. Roche
- Priority: TW92135864A 20031207
- Main IPC: G03C5/00
- IPC: G03C5/00

Abstract:
In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.
Public/Granted literature
- US20090096090A1 Photolithography Process and Photomask Structure Implemented in a Photolithography Process Public/Granted day:2009-04-16
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