The invention relates to a method for producing submicron structures using a shadow mask, whereby a material charge and/or energy charge occurs through the openings of the shadow mask. The method comprises the following steps: a film which is used as a shadow mask and which is made of a masking material is applied to the substrate, tears are produced in the film, the tears extending until the substrate, edge areas of the film arranged on the tears are detached thereby exposing the substrate and the material or the energy is applied to the substrate by the tears, also above the exposed edge area of the shadow mask film.