Invention Grant
US07718459B2 Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation
有权
使用肖特基和欧姆接触到浮动扩散区域的双转换增益像素以及制造和操作的方法
- Patent Title: Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation
- Patent Title (中): 使用肖特基和欧姆接触到浮动扩散区域的双转换增益像素以及制造和操作的方法
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Application No.: US11106466Application Date: 2005-04-15
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Publication No.: US07718459B2Publication Date: 2010-05-18
- Inventor: Inna Patrick , Sungkwon C. Hong , Jeffrey A. McKee
- Applicant: Inna Patrick , Sungkwon C. Hong , Jeffrey A. McKee
- Applicant Address: KY Grand Cayman
- Assignee: Aptina Imaging Corporation
- Current Assignee: Aptina Imaging Corporation
- Current Assignee Address: KY Grand Cayman
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
The exemplary embodiments provide an imager with dual conversion gain charge storage and thus, improved dynamic range. A dual conversion gain element (e.g., Schottky diode) is coupled between a floating diffusion region and a respective capacitor. The dual conversion gain element switches in the capacitance of the capacitor, in response to charge stored at the floating diffusion region, to change the conversion gain of the floating diffusion region from a first conversion gain to a second conversion gain. In an additional aspect, the exemplary embodiments provide an ohmic contact between the gate of a source follower transistor and the floating diffusion region which assists in the readout of the dual conversion gain output signal of a pixel.
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