Invention Grant
- Patent Title: Nanometer-scale electromechanical switch and fabrication process
- Patent Title (中): 纳米级机电开关及制造工艺
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Application No.: US12266845Application Date: 2008-11-07
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Publication No.: US07718461B2Publication Date: 2010-05-18
- Inventor: Thomas Weller , Thomas Ketterl
- Applicant: Thomas Weller , Thomas Ketterl
- Applicant Address: US FL Tampa
- Assignee: University of South Florida
- Current Assignee: University of South Florida
- Current Assignee Address: US FL Tampa
- Agency: Smith & Hopen, P.A.
- Agent Molly L. Sauter
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention describes nano-scale fabrication technique used to create a sub-micron wide gap across the center conductor of a coplanar waveguide transmission line configured in a fixed-fixed beam arrangement, resulting in a pair of opposing cantilever beams that comprise an electro-mechanical switch. Accordingly, a nanometer-scale mechanical switch with very high switching speed and low actuation voltage has been developed. This switch is intended primarily for application in the RF/microwave/wireless industry.
Public/Granted literature
- US20100087063A1 NANOMETER-SCALE ELECTROMECHANICAL SWITCH AND FABRICATION PROCESS Public/Granted day:2010-04-08
Information query
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