Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US11964350Application Date: 2007-12-26
-
Publication No.: US07718477B2Publication Date: 2010-05-18
- Inventor: Hyun Yul Kwon
- Applicant: Hyun Yul Kwon
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-064540 20070628
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
This patent relates to a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes an insulating layer formed in a semiconductor substrate, trenches formed within the insulating layer, silicon layers formed within the trenches, gates formed on the silicon layers, and junctions formed in the silicon layers at both sides of the gates.
Public/Granted literature
- US20090001475A1 Semiconductor Device and Method of Fabricating the Same Public/Granted day:2009-01-01
Information query
IPC分类:
