Invention Grant
US07718486B2 Structures and methods for fabricating vertically integrated HBT-FET device
有权
垂直集成HBT-FET器件的结构和方法
- Patent Title: Structures and methods for fabricating vertically integrated HBT-FET device
- Patent Title (中): 垂直集成HBT-FET器件的结构和方法
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Application No.: US11331630Application Date: 2006-01-13
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Publication No.: US07718486B2Publication Date: 2010-05-18
- Inventor: Oleh Krutko , Kezhou Xie , Mohsen Shokrani , Aditya Gupta , Boris Gedzberg
- Applicant: Oleh Krutko , Kezhou Xie , Mohsen Shokrani , Aditya Gupta , Boris Gedzberg
- Applicant Address: US NJ Warren
- Assignee: Anadigics, Inc.
- Current Assignee: Anadigics, Inc.
- Current Assignee Address: US NJ Warren
- Agency: Ward & Olivo
- Main IPC: H01L21/8249
- IPC: H01L21/8249
Abstract:
Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for fabricating the FET on a semi-insulating GaAs substrate; fabricating a highly doped thick GaAs layer serving as the cap layer for the FET and the subcollector layer for the HBT; and producing a second set of epitaxial layers for fabricating the HBT.
Public/Granted literature
- US20060113566A1 Structures and methods for fabricating vertically integrated HBT-FET device Public/Granted day:2006-06-01
Information query
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