Invention Grant
- Patent Title: Method of forming a semiconductor structure comprising insulating layers with different thicknesses
- Patent Title (中): 形成具有不同厚度的绝缘层的半导体结构的方法
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Application No.: US11767060Application Date: 2007-06-22
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Publication No.: US07718505B2Publication Date: 2010-05-18
- Inventor: Nicola Vannucci , Hubert Maier
- Applicant: Nicola Vannucci , Hubert Maier
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
The method of forming a semiconductor structure in a substrate comprises, forming a first trench with a first width We and a second trench with a second width Wc, wherein the first width We is larger than the second width Wc, depositing a protection material, lining the first trench, covering the substrate surface and filling the second trench and removing partially the protection material, wherein a lower portion of the second trench remains filled with the protection material.
Public/Granted literature
- US20080315303A1 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING INSULATING LAYERS WITH DIFFERENT THICKNESSES Public/Granted day:2008-12-25
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