Invention Grant
- Patent Title: Low-k damage avoidance during bevel etch processing
- Patent Title (中): 斜角蚀刻加工过程中的低k损伤避免
-
Application No.: US11510309Application Date: 2006-08-25
-
Publication No.: US07718542B2Publication Date: 2010-05-18
- Inventor: Yunsang Kim , Andrew Bailey, III , Jack Chen
- Applicant: Yunsang Kim , Andrew Bailey, III , Jack Chen
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
Public/Granted literature
- US20080050923A1 Low-k damage avoidance during bevel etch processing Public/Granted day:2008-02-28
Information query
IPC分类:
