Nanostructured titania

Invention Grant

US07718552B2 Nanostructured titania 有权

Title translation: 纳米结构二氧化钛

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Patent Title: Nanostructured titania
Patent Title (中): 纳米结构二氧化钛
Application No.: US11397165

Application Date: 2006-04-04
Publication No.: US07718552B2

Publication Date: 2010-05-18
Inventor: Zuruzi Abu Samah , Noel C. MacDonald , Marcus Ward , Martin Moskovits , Andrei Kolmakov , Cyrus R. Safinya
Applicant: Zuruzi Abu Samah , Noel C. MacDonald , Marcus Ward , Martin Moskovits , Andrei Kolmakov , Cyrus R. Safinya
Applicant Address: US CA Oakland
Assignee: The Regents of the University of California
Current Assignee: The Regents of the University of California
Current Assignee Address: US CA Oakland
Agency: Gates & Cooper LLP
Main IPC: H01L21/469
IPC: H01L21/469

Abstract:

A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the Ti film, the limited region being of an area less than a threshold area, oxidizing the exposed limited region of the Th.ucsbi film, and annealing the exposed limited region of the Ti film.

Abstract(Chinese):

纳米结构二氧化钛的无裂纹的方法和装置。根据本发明的方法包括在表面上沉积Ti膜，在Ti膜上沉积掩模层，蚀刻所述掩模层以暴露Ti膜的有限区域，该有限区域的面积小于氧化暴露的Th.ucsbi膜的限制区域，并退火Ti膜的暴露的限制区域。

Public/Granted literature

US20100086734A1 NANOSTRUCTURED TITANIA Public/Granted day:2010-04-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理