Invention Grant
- Patent Title: Erosion resistance enhanced quartz used in plasma etch chamber
- Patent Title (中): 用于等离子体蚀刻室的耐腐蚀性增强的石英
-
Application No.: US11738030Application Date: 2007-04-20
-
Publication No.: US07718559B2Publication Date: 2010-05-18
- Inventor: Jie Yuan , Jennifer Y. Sun , Renguan Duan
- Applicant: Jie Yuan , Jennifer Y. Sun , Renguan Duan
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C03C3/06
- IPC: C03C3/06 ; C03C3/04
Abstract:
A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.
Public/Granted literature
- US20080261800A1 EROSION RESISTANCE ENHANCED QUARTZ USED IN PLASMA ETCH CHAMBER Public/Granted day:2008-10-23
Information query
