Invention Grant
US07718590B2 Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
有权
从具有铜和低k电介质材料的衬底上去除抗蚀剂，蚀刻残留物和氧化铜的方法
- Patent Title: Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
- Patent Title (中): 从具有铜和低k电介质材料的衬底上去除抗蚀剂，蚀刻残留物和氧化铜的方法
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Application No.: US11360810Application Date: 2006-02-24
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Publication No.: US07718590B2Publication Date: 2010-05-18
- Inventor: Tomoko Suzuki , Toshitaka Hiraga , Yasuo Katsuya , Chris Reid
- Applicant: Tomoko Suzuki , Toshitaka Hiraga , Yasuo Katsuya , Chris Reid
- Applicant Address: US CA
- Assignee: EKC Technology, Inc.
- Current Assignee: EKC Technology, Inc.
- Current Assignee Address: US CA
- Agency: Dunlap Codding, P.C.
- Main IPC: C11D7/50
- IPC: C11D7/50
Abstract:
A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.
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