Invention Grant
- Patent Title: Solid-state imaging element and solid-state imaging device
- Patent Title (中): 固态成像元件和固态成像装置
-
Application No.: US11768970Application Date: 2007-06-27
-
Publication No.: US07718949B2Publication Date: 2010-05-18
- Inventor: Kimiaki Toshikiyo
- Applicant: Kimiaki Toshikiyo
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-182301 20060630
- Main IPC: H01J3/14
- IPC: H01J3/14

Abstract:
A solid-state imaging element or the like capable of limiting an abrupt refractive index distribution and collecting incident light at high efficiency is provided. The solid-state imaging element (size: 5.6 μm square) has a distributed index lens, a G color filter, Al wiring, a signal transmitting unit, a planarizing layer, a light receiving element (Si photodiode) and a Si substrate. A concentric structure of the distributed index lens is formed of SiO2 (n=1.43). This structure is a two-stage structure having film thicknesses of 1.2 and 0.8 μm. The distributed index lens is constructed by cutting concentric circular recesses into SiO2 and has a planar region about the center. A medium surrounding the lens is air (n=1).
Public/Granted literature
- US20080011937A1 SOLID-STATE IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE Public/Granted day:2008-01-17
Information query