Invention Grant
- Patent Title: Infrared detection unit using a semiconductor optical lens
- Patent Title (中): 使用半导体光学透镜的红外检测单元
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Application No.: US12094964Application Date: 2006-11-24
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Publication No.: US07718970B2Publication Date: 2010-05-18
- Inventor: Yoshiaki Honda , Takayuki Nishikawa , Tomohiro Kamitsu
- Applicant: Yoshiaki Honda , Takayuki Nishikawa , Tomohiro Kamitsu
- Applicant Address: JP Osaka
- Assignee: Panasonic Electric Works Co., Ltd.
- Current Assignee: Panasonic Electric Works Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Cheng Law Group, PLLC
- Priority: JP2005-341213 20051125; JP2006-089602 20060328
- International Application: PCT/JP2006/324044 WO 20061124
- International Announcement: WO2007/061137 WO 20070531
- Main IPC: G01J5/02
- IPC: G01J5/02

Abstract:
An infrared detection unit includes a base carrying an infrared sensor element, and a cap configured to be fitted on the base to surround the infrared sensor element. The cap has a top wall with a window in which a semiconductor lens is fitted to collect an infrared radiation onto the infrared sensor element. The semiconductor optical lens is formed from a semiconductor substrate to have a convex lens and a flange which surround said convex lens. An infrared barrier is formed on the semiconductor lens to block the infrared radiation from passing through the boundary between the circumference of the convex lens and the window. Accordingly, the infrared sensor element can receive only the infrared radiation originating from a detection area intended by the convex lens.
Public/Granted literature
- US20090266988A1 INFRARED DETECTION UNIT USING A SEMICONDUCTOR OPTICAL LENS Public/Granted day:2009-10-29
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