Invention Grant
- Patent Title: Semiconductor device having multi-channel and method of fabricating the same
- Patent Title (中): 具有多通道的半导体器件及其制造方法
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Application No.: US11954610Application Date: 2007-12-12
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Publication No.: US07719038B2Publication Date: 2010-05-18
- Inventor: Dae Sik Kim
- Applicant: Dae Sik Kim
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2007-0037335 20070417
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L27/088
Abstract:
An embodiment of the present invention relates to a semiconductor device having a multi-channel and a method of fabricating the same. In an aspect, the semiconductor device includes a semiconductor substrate in which isolation layers are formed, a plurality of trenches formed within an active region of the semiconductor substrate, and a channel active region configured to connect opposite sidewalls within each trench region and having a surface used as a channel region.
Public/Granted literature
- US20080258237A1 SEMICONDUCTOR DEVICE HAVING MULTI-CHANNEL AND METHOD OF FABRICATING THE SAME Public/Granted day:2008-10-23
Information query
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