Invention Grant
US07719065B2 Ruthenium layer for a dielectric layer containing a lanthanide oxide
有权
用于含有镧系元素氧化物的介电层的钌层
- Patent Title: Ruthenium layer for a dielectric layer containing a lanthanide oxide
- Patent Title (中): 用于含有镧系元素氧化物的介电层的钌层
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Application No.: US11215412Application Date: 2005-08-29
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Publication No.: US07719065B2Publication Date: 2010-05-18
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A ruthenium layer for a dielectric layer containing a lanthanide layer and a method of fabricating such a combination of ruthenium layer and dielectric layer produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide layer may be formed on the lanthanide oxide dielectric layer.
Public/Granted literature
- US20060043492A1 Ruthenium gate for a lanthanide oxide dielectric layer Public/Granted day:2006-03-02
Information query
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