Invention Grant
- Patent Title: Hinge memory mitigation system and method
- Patent Title (中): 铰链记忆缓解系统及方法
-
Application No.: US11958110Application Date: 2007-12-17
-
Publication No.: US07719740B2Publication Date: 2010-05-18
- Inventor: Patrick Ian Oden
- Applicant: Patrick Ian Oden
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Charles A. Brill; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G02B26/08
- IPC: G02B26/08 ; G02B26/00

Abstract:
Provided are a system and method for reducing failures due to hinge memory. The method, in one embodiment, includes providing a torsional element having an amount of hinge memory, wherein the hinge memory is at least partially created using an average operational temperature. The method, in this embodiment, further includes subjecting the torsional element having the hinge memory to a temperature equal to or greater than the average operational temperature while the torsional element is in a parked state for an amount of time to reduce the amount of the hinge memory.
Public/Granted literature
- US20090153941A1 HINGE MEMORY MITIGATION SYSTEM AND METHOD Public/Granted day:2009-06-18
Information query