Invention Grant
- Patent Title: Apparatus of memory array using FinFETs
- Patent Title (中): 使用FinFET的存储器阵列的装置
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Application No.: US11734069Application Date: 2007-04-11
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Publication No.: US07723786B2Publication Date: 2010-05-25
- Inventor: Ronald Kakoschke , Klaus Schruefer
- Applicant: Ronald Kakoschke , Klaus Schruefer
- Agent Phillip H. Schlazer
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L39/22
Abstract:
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
Public/Granted literature
- US20080251779A1 APPARATUS OF MEMORY ARRAY USING FINFETS Public/Granted day:2008-10-16
Information query
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