Invention Grant
- Patent Title: Integrated circuit device
- Patent Title (中): 集成电路器件
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Application No.: US11504664Application Date: 2006-08-16
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Publication No.: US07723842B2Publication Date: 2010-05-25
- Inventor: Takuya Tsurume , Naoto Kusumoto
- Applicant: Takuya Tsurume , Naoto Kusumoto
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-254481 20050902
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/00
Abstract:
To solve the problems caused by accumulation of heat generated from an integrated circuit. The integrated circuit device of the invention includes a substrate over one surface of which an integrated circuit is formed. The other surface of the substrate (a surface over which the integrated circuit is not formed) includes a depressed portion and has a larger surface area than the one surface. The depressed portion formed on the other surface of the substrate is filled with a heat sink material, or a film containing a heat sink material is formed at least over the surface of the depressed portion. Such integrated circuit devices may be provided in a multilayer structure.
Public/Granted literature
- US20070052088A1 Integrated circuit device Public/Granted day:2007-03-08
Information query
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