Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects

Invention Grant

US07727340B2 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects 有权

Title translation: 在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷

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Patent Title: Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
Patent Title (中): 在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷
Application No.: US11811396

Application Date: 2007-06-08
Publication No.: US07727340B2

Publication Date: 2010-06-01
Inventor: Gilyong Y. Chung , Chin-Che Tin , John R. Williams , Kyle McDonald , Massimiliano De Ventra , Robert A. Weller , Socrates T. Pantelides , Leonard C. Feldman
Applicant: Gilyong Y. Chung , Chin-Che Tin , John R. Williams , Kyle McDonald , Massimiliano De Ventra , Robert A. Weller , Socrates T. Pantelides , Leonard C. Feldman
Applicant Address: US TN Nashville US AL Auburn
Assignee: Vanderbilt University,Auburn University
Current Assignee: Vanderbilt University,Auburn University
Current Assignee Address: US TN Nashville US AL Auburn
Agency: Morris, Manning & Martin LLP
Agent Tim Tingkang Xia
Main IPC: H01L21/3105
IPC: H01L21/3105

Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects

Abstract:

In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.

Abstract(Chinese):

一方面，本发明提供一种制造碳化硅半导体器件的方法。在碳化硅衬底上形成二氧化硅层，并且在二氧化硅/碳化硅界面上并入氮。在一个实施方案中，通过在一氧化氮或一氧化二氮中对半导体器件进行退火来引入氮。在另一个实施方案中，通过用氨将半导体器件退火而并入氮气。

Public/Granted literature

US20080128709A1 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects Public/Granted day:2008-06-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理