Invention Grant
- Patent Title: Reference pH sensor, preparation and application thereof
- Patent Title (中): 参考pH传感器,其制备和应用
-
Application No.: US12397231Application Date: 2009-03-03
-
Publication No.: US07727370B2Publication Date: 2010-06-01
- Inventor: Jung-Chuan Chou , Diing-Jia Tzeng
- Applicant: Jung-Chuan Chou , Diing-Jia Tzeng
- Applicant Address: TW Yunlin
- Assignee: National Yunlin University of Science and Technology
- Current Assignee: National Yunlin University of Science and Technology
- Current Assignee Address: TW Yunlin
- Agency: Quintero Law Office
- Priority: TW95100302A 20060104
- Main IPC: G01N27/26
- IPC: G01N27/26

Abstract:
A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a solid-state conductive sensing layer on the substrate, and a polypyrrole layer on the solid-state conductive sensing layer, and a metal wire connecting the MOSFET and the sensing unit.
Public/Granted literature
- US20090170207A1 REFERENCE PH SENSOR, PREPARATION AND APPLICATION THEREOF Public/Granted day:2009-07-02
Information query