Invention Grant
- Patent Title: Dry etching method
- Patent Title (中): 干蚀刻法
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Application No.: US10542055Application Date: 2004-06-11
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Publication No.: US07727412B2Publication Date: 2010-06-01
- Inventor: Shuichi Okawa , Kazuhiro Hattori , Mitsuru Takai
- Applicant: Shuichi Okawa , Kazuhiro Hattori , Mitsuru Takai
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2003-188467 20030630
- International Application: PCT/JP2004/008233 WO 20040611
- International Announcement: WO2005/001919 WO 20050601
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
A dry etching method and the like that can process a layer to be processed in a fine pattern to have a peripheral portion of an angular shape, are described. This dry etching method forms a step portion 21 along a peripheral portion of a first mask layer 20 that corresponds to an outline of an etching pattern in such a manner that the step portion 21 projects toward an opposite side to a magnetic thin layer 18 (layer to be processed).
Public/Granted literature
- US20060108323A1 Dry etching method Public/Granted day:2006-05-25
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