Invention Grant
- Patent Title: Dielectric device and its manufacturing method
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Application No.: US11961218Application Date: 2007-12-20
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Publication No.: US07727585B2Publication Date: 2010-06-01
- Inventor: Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
- Applicant: Kei Sato , Nobuyuki Kobayashi , Tsutomu Nanataki
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2007-038069 20070219; JP2007-148840 20070605
- Main IPC: B05D1/12
- IPC: B05D1/12

Abstract:
A manufacturing method of a dielectric device includes steps described below. (1) Mixing step: Powders serving as a matrix and additive powders for sintering the matrix are mixed. (2) Mixture heat-treating step: The mixture of the matrix and the additive that has been subject to the mixing step is heat-treated. (3) Deposition layer formation step: The material powders obtained through the mixture heat-treating step are injected toward a substrate so as to form a deposition layer on the substrate. (4) Deposition layer heat-treating step: The deposition layer formed on the substrate through the deposition layer formation step is heat-treated so as to form the dielectric layer on the substrate.
Public/Granted literature
- US20080196227A1 DIELECTRIC DEVICE AND ITS MANUFACTURING METHOD Public/Granted day:2008-08-21
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