Invention Grant
US07727683B2 High-transmission attenuating PSM 有权
高传输衰减PSM

  • Patent Title: High-transmission attenuating PSM
  • Patent Title (中): 高传输衰减PSM
  • Application No.: US11777280
    Application Date: 2007-07-12
  • Publication No.: US07727683B2
    Publication Date: 2010-06-01
  • Inventor: Chih-Li Chen
  • Applicant: Chih-Li Chen
  • Applicant Address: TW Kueishan, Tao-Yuan Hsien
  • Assignee: Nanya Technology Corp.
  • Current Assignee: Nanya Technology Corp.
  • Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
  • Agent Winston Hsu
  • Priority: TW96115718A 20070503
  • Main IPC: G03F1/00
  • IPC: G03F1/00
High-transmission attenuating PSM
Abstract:
An attenuating PSM includes a quartz substrate, a first dummy pad pattern disposed on the quartz substrate, wherein the first dummy pad pattern is composed of a first phase shifter material layer with a transmission rate of greater than or equal to 15%, and a first opaque pattern disposed at a center area of the first dummy pad pattern. The first opaque pattern has a shape that is analogous to the first dummy pad pattern and surface area of the first opaque pattern is smaller than that of the first dummy pad pattern.
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