Invention Grant
- Patent Title: High-transmission attenuating PSM
- Patent Title (中): 高传输衰减PSM
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Application No.: US11777280Application Date: 2007-07-12
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Publication No.: US07727683B2Publication Date: 2010-06-01
- Inventor: Chih-Li Chen
- Applicant: Chih-Li Chen
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu
- Priority: TW96115718A 20070503
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
An attenuating PSM includes a quartz substrate, a first dummy pad pattern disposed on the quartz substrate, wherein the first dummy pad pattern is composed of a first phase shifter material layer with a transmission rate of greater than or equal to 15%, and a first opaque pattern disposed at a center area of the first dummy pad pattern. The first opaque pattern has a shape that is analogous to the first dummy pad pattern and surface area of the first opaque pattern is smaller than that of the first dummy pad pattern.
Public/Granted literature
- US20080274414A1 HIGH-TRANSMISSION ATTENUATING PSM Public/Granted day:2008-11-06
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