Invention Grant
- Patent Title: Mask and manufacturing method thereof
- Patent Title (中): 掩模及其制造方法
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Application No.: US11958523Application Date: 2007-12-18
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Publication No.: US07727684B2Publication Date: 2010-06-01
- Inventor: Soo Kyeong Jeong
- Applicant: Soo Kyeong Jeong
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0047326 20070515
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A blank mask is provided. The blank mask includes a mask layer disposed on a transparent quartz substrate, and a nano inorganic material-polymer complex layer. The nano inorganic material-polymer complex layer has nano-scale components and is formed on a surface of the mask layer to adsorb a residual contamination source remaining on the surface of the mask layer and to protect the surface of the mask layer from external contamination sources. The nano inorganic material-polymer complex layer can include a nano clay-polymer composite where PVDF is interposed between the nano clay plate-shaped layers. The contamination sources can be removed from the mask layer surface by removing the composite layer.
Public/Granted literature
- US20080286663A1 Mask and Manufacturing Method Thereof Public/Granted day:2008-11-20
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