Invention Grant
US07727703B2 Methods of fabricating an electronic device and an sililation polyvinyl phenol for a dielectric layer of an electronic device
失效
制造电子器件的电子器件的方法和用于电子器件的电介质层的硅烷化聚苯乙烯
- Patent Title: Methods of fabricating an electronic device and an sililation polyvinyl phenol for a dielectric layer of an electronic device
- Patent Title (中): 制造电子器件的电子器件的方法和用于电子器件的电介质层的硅烷化聚苯乙烯
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Application No.: US11594154Application Date: 2006-11-08
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Publication No.: US07727703B2Publication Date: 2010-06-01
- Inventor: Po-Yuan Lo , Feng-Yu Yang , Zing-Way Pei
- Applicant: Po-Yuan Lo , Feng-Yu Yang , Zing-Way Pei
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW95129771A 20060814
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/075
Abstract:
A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
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