Invention Grant
- Patent Title: High etch resistant underlayer compositions for multilayer lithographic processes
- Patent Title (中): 用于多层光刻工艺的高抗蚀蚀底层组合物
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Application No.: US12033915Application Date: 2008-02-20
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Publication No.: US07727705B2Publication Date: 2010-06-01
- Inventor: Binod B. De , Sanjay Malik , Raj Sakamuri , Chisun Hong
- Applicant: Binod B. De , Sanjay Malik , Raj Sakamuri , Chisun Hong
- Applicant Address: US RI North Kingstown
- Assignee: Fujifilm Electronic Materials, U.S.A., Inc.
- Current Assignee: Fujifilm Electronic Materials, U.S.A., Inc.
- Current Assignee Address: US RI North Kingstown
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/20 ; G03F7/30 ; G03F7/36 ; G03C1/76
Abstract:
An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.
Public/Granted literature
- US20080206667A1 HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES Public/Granted day:2008-08-28
Information query
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