Invention Grant
- Patent Title: Method of manufacturing an analytical sample and method of analyzing an analytical sample
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Application No.: US11976375Application Date: 2007-10-24
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Publication No.: US07727773B2Publication Date: 2010-06-01
- Inventor: Satoshi Toriumi
- Applicant: Satoshi Toriumi
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-296745 20061031
- Main IPC: G01N24/00
- IPC: G01N24/00

Abstract:
A method of manufacturing an analytical sample by a secondary ion mass spectrometry method is provided, which comprises a step of forming a separation layer over a substrate, a step of forming one of a thin film and a thin-film stack body to be analyzed over the separation layer, a step of forming an opening portion in one of the thin film and the thin-film stack body, a step of attaching a supporting body to one of a surface of the thin film and a surface of a top layer of the thin-film stack body, and a step of separating one of the thin film and the thin-film stack body from the substrate.
Public/Granted literature
- US20080102536A1 Method of manufacturing an analytical sample and method of analyzing an analytical sample Public/Granted day:2008-05-01
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