Invention Grant
- Patent Title: Magnetoresistive element and method of manufacturing the same
- Patent Title (中): 磁阻元件及其制造方法
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Application No.: US12200181Application Date: 2008-08-28
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Publication No.: US07727778B2Publication Date: 2010-06-01
- Inventor: Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
- Applicant: Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
Public/Granted literature
- US20100053823A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-03-04
Information query
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