Invention Grant
- Patent Title: Method of fabricating and/or repairing a light emitting device
- Patent Title (中): 制造和/或修复发光器件的方法
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Application No.: US11403386Application Date: 2006-04-13
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Publication No.: US07727779B2Publication Date: 2010-06-01
- Inventor: Shunpei Yamazaki , Yasuyuki Arai , Mai Osada
- Applicant: Shunpei Yamazaki , Yasuyuki Arai , Mai Osada
- Applicant Address: JP
- Assignee: Semiconductor Laboratory Co., Ltd.
- Current Assignee: Semiconductor Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell Sanders LLP
- Priority: JP2000-309564 20001010
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of repairing a light emitting device which makes high quality image display possible even if a pin hole is formed during formation of an EL layer is provided. The method of repairing a light emitting device is characterized in that a reverse bias voltage is applied to an EL element at given time intervals to thereby reduce a current flowing into an EL element when the reverse bias voltage is applied to the EL element.
Public/Granted literature
- US20060183254A1 Method of fabricating and/or repairing a light emitting device Public/Granted day:2006-08-17
Information query
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