Invention Grant
US07727783B2 Method of measuring minority carrier diffusion length and method of manufacturing silicon wafer
有权
测量少数载流子扩散长度的方法和制造硅晶片的方法
- Patent Title: Method of measuring minority carrier diffusion length and method of manufacturing silicon wafer
- Patent Title (中): 测量少数载流子扩散长度的方法和制造硅晶片的方法
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Application No.: US11697796Application Date: 2007-04-09
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Publication No.: US07727783B2Publication Date: 2010-06-01
- Inventor: Tsuyoshi Kubota
- Applicant: Tsuyoshi Kubota
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-108406 20060411
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/469 ; H01L21/00
Abstract:
A method of measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method including irradiating the surface-treated silicon wafer with ultraviolet radiation in an oxygen-containing atmosphere, and measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method.
Public/Granted literature
- US20070287205A1 METHOD OF MEASURING MINORITY CARRIER DIFFUSION LENGTH AND METHOD OF MANUFACTURING SILICON WAFER Public/Granted day:2007-12-13
Information query
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