Invention Grant
- Patent Title: Method for fabricating light emitting diodes
- Patent Title (中): 制造发光二极管的方法
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Application No.: US12011816Application Date: 2008-01-29
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Publication No.: US07727790B2Publication Date: 2010-06-01
- Inventor: Scott M. Zimmerman , Karl W. Beeson , William R. Livesay , Richard L. Rose
- Applicant: Scott M. Zimmerman , Karl W. Beeson , William R. Livesay , Richard L. Rose
- Applicant Address: US CA San Diego
- Assignee: Goldeneye, Inc.
- Current Assignee: Goldeneye, Inc.
- Current Assignee Address: US CA San Diego
- Agent William Propp, Esq
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
The invention is method for fabricating light emitting diodes. A layered semiconductor structure is provided on a growth substrate. The method includes using a pulsed laser to form an interfacial layer between the layered semiconductor structure and the growth substrate for subsequent substrate detachment and to simultaneously form light extracting elements on the layered semiconductor structure. The method reduces the number of steps required to fabricate a light emitting diode.
Public/Granted literature
- US20080182353A1 Method for fabricating light emitting diodes Public/Granted day:2008-07-31
Information query
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