Invention Grant
US07727794B2 Photodiode array, method for manufacturing same, and radiation detector 有权
光电二极管阵列,其制造方法和辐射探测器

  • Patent Title: Photodiode array, method for manufacturing same, and radiation detector
  • Patent Title (中): 光电二极管阵列,其制造方法和辐射探测器
  • Application No.: US10548487
    Application Date: 2004-03-10
  • Publication No.: US07727794B2
    Publication Date: 2010-06-01
  • Inventor: Katsumi Shibayama
  • Applicant: Katsumi Shibayama
  • Applicant Address: JP Hamamatsu-shi, Shizuoka
  • Assignee: Hamamatsu Photonics K.K.
  • Current Assignee: Hamamatsu Photonics K.K.
  • Current Assignee Address: JP Hamamatsu-shi, Shizuoka
  • Agency: Drinker Biddle & Reath LLP
  • Priority: JP2003-063891 20030310
  • International Application: PCT/JP2004/003118 WO 20040310
  • International Announcement: WO2004/082025 WO 20040923
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Photodiode array, method for manufacturing same, and radiation detector
Abstract:
A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes (4) are formed in array form on a surface at a side of an n-type silicon substrate (3) onto which light to be detected is made incident and penetrating wirings (8), which pass through from the incidence surface side to the back surface side, are formed for the photodiodes (4), the photodiode array (1) is arranged with a transparent resin film (6), which covers the formed regions of the photodiodes (4) and transmits the light to be detected, provided at the incidence surface side.
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