Invention Grant
- Patent Title: Method for patterning detector crystal using Q-switched laser
- Patent Title (中): 使用Q开关激光器构图检测器晶体的方法
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Application No.: US11796104Application Date: 2007-04-26
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Publication No.: US07727796B2Publication Date: 2010-06-01
- Inventor: Heikki Johannes Sipilä , Hans Andersson , Seppo Nenonen , Juha Jouni Kalliopuska
- Applicant: Heikki Johannes Sipilä , Hans Andersson , Seppo Nenonen , Juha Jouni Kalliopuska
- Applicant Address: FI
- Assignee: Oxford Instruments Analytical Oy
- Current Assignee: Oxford Instruments Analytical Oy
- Current Assignee Address: FI
- Agency: Wood, Phillips, Katz, Clark & Mortimer
- Main IPC: H01L31/0248
- IPC: H01L31/0248 ; H01L31/072
Abstract:
A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.
Public/Granted literature
- US20080265358A1 Method for patterning a detector crystal, and a semiconductor detector having a patterned crystal Public/Granted day:2008-10-30
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